Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition

The ease of Te sublimation from Bi₂Te₃-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi₂Te₃-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi₂Te_2.7Se_0.3 powders resulted in significant suppression of the generation of pores in Bi₂Te_2.7Se_0.3 extrudates and increased the density even after post-annealing at 500 °C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi₂Te_2.7Se_0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi₂Te₃-based alloys without sacrificing thermoelectric performance.     

Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer

In this study, a trapezoidal-shaped electron blocking layer is proposed to improve efficiency droop of InGaN/GaN multiple quantum well light-emitting diodes. The energy band diagram, carrier distribution profile, electrostatic field, and electron current leakage are systematically investigated between two light-emitting diodes with different electron blocking layer structures. The simulation results show that, when traditional AlGaN electron blocking layer is replaced by trapezoidal-shaped electron blocking layer, the electron current leakage is dramatically reduced and the hole injection efficiency in markedly enhanced due to the better polarization match, the quantum-confined Stark effect is mitigated and the radiative recombination rate is increased in the active region subsequently, which are responsible for the alleviation of efficiency droop. The optical performance of light-emitting diodes with trapezoidal-shaped electron blocking layer is significantly improved when compared with its counterpart with traditional AlGaN electron blocking layer.     

基于BP算法的无人机物理层网络编码研究

建立了基于置信传播(BP)算法的双向中继系统传输模型,理论推导了中继节点处物理层网络编码的映射关系,研究了不同调制方式下各种异步因素对通信系统误码率的影响规律,为无人机在实战中更广泛地应用提供理论基础.     

An efficient polymer solar cell using graphene oxide interface assembled via layer-by-layer deposition

Graphene oxide (GO) is widely used as an interfacial material in applications such as organic light emitting diodes and photovoltaic devices. Herein we report a layer-by-layer (LbL) assembled GO thin film as an anode interfacial layer (AIL) for efficient polymer solar cells (PSCs). The GO thin film is fabricated by alternately depositing cationic polyelectrolyte poly(diallyldimethylammonium chloride) (PDDA) and GO on ITO/glass substrate, which possesses controllable thickness by adjusting LbL deposition frequency. The presence of ultrathin GO films improves the work function of ITO, leading to a better contact between the active layer and ITO anode. With the optimized number of deposition times, the efficiency of 6.04% for the PSC with PDDA-GO bilayer (GO-2) as the AIL was achieved.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Effect of sodium doping on graded Cu(In1−xGax)Se2 thin films prepared by chemical spray pyrolysis

In the present work we have studied the effect of Na on the properties of graded Cu(In_1−xGa_x)Se₂ (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×10¹⁸–2.5×10¹⁹ cm⁻³) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively.     

Recent progress of the gas diffusion layer in proton exchange membrane fuel cells: Material and structure designs of microporous layer

Proton exchange membrane fuel cells (PEMFCs) have become the most attractive power supply units for stationary and mobile applications. The operation, design characteristics, as well as performance of PEMFCs, are closely related to the multiphase transport of mass, heat, and electricity in the cell, a critical of which is the gas diffusion layer (GDL). It is very important to guarantee the transmission of water and gasses under high current density, and which is the weakness of PEMFCs at present. Microporous layer (MPL) is considered to be the key variable for mass transfer, so varieties of works focus on modification of MPL materials and its structure design. However, there is still a lack of special review to summarize and prospect the progress of MPL in recent years. This review article therefore focuses on the insights and comprehensive understanding of four critical issues of the MPL, the porosity, pore size distribution, wettability, structural design and the durability of MPL. At last, the conclusion and recommendations section summarized the future prospects and recommendations for possible research opportunities.     

Rate equation theory for the hydrogenation kinetics of Mg-based materials

A uniform solid product layer normally assumed in the shrinking-core model cannot predict the kinetic transition behavior of the H₂ adsorption reactions. In this study, the concept of a uniform solid product layer has been replaced by that of the inward growth of solid products on the solid surface. A rate equation is established to calculate the inward growth of the solid product and was implemented into the shrinking-core model to calculate the H₂ adsorption kinetics for various shapes of Mg-based materials. The prediction accuracy of the developed model is verified from the detailed experimental data. To account for the external gas diffusion around the particle and the intraparticle gas diffusion, an analytical equation is derived using the Thiele modulus method. This model can be used to analyze various kinetic aspects and to analyze the effect of change in the particle microstructure on intraparticle diffusion.     

Indoor boundary layer chemistry modeling

Ozone (O₃) chemistry is thought to dominate the oxidation of indoor surfaces. We consider the hypothesis that reactions taking place within indoor boundary layers result in greater than anticipated hydroxyl radical (OH) deposition rates. We develop models that account for boundary layer mass‐transfer phenomena, O₃‐terpene chemistry and OH formation, removal, and deposition; we solve these analytically and by applying numerical methods. For an O₃‐limonene system, we find that OH flux to a surface with an O₃ reaction probability of 10^?8 is 4.3 × 10^?5 molec/(cm² s) which is about 10 times greater than predicted by a traditional boundary layer theory. At very low air exchange rates the OH surface flux can be as much as 10% of that for O₃. This effect becomes less pronounced for more O₃‐reactive surfaces. Turbulence intensity does not strongly influence the OH concentration gradient except for surfaces with an O₃ reaction probability >10^?4. Although the O₃ flux dominates OH flux under most conditions, OH flux can be responsible for as much as 10% of total oxidant uptake to otherwise low‐reactivity surfaces. Further, OH chemistry differs from that for ozone; therefore, its deposition is important in understanding the chemical evolution of some indoor surfaces and surface films.     

炼化装置高压串低压风险分析

结合高压串低压事故,运用保护层风险分析方法进行系统分析,帮助操作人员从保护层管理方面出发,更加直观的分析装置工艺设计与操作中存在的隐患与缺陷,从而更好的防止事故发生。